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| DBES105A RoHS COMPLIANT Flip-Chip Dual Diode GaAs Diode Description The DBES105A is a dual Schottky diode based on a low cost 1m stepper process including a bump technology. The parasitic inductances are reduced and result in a very high operating frequency. This flip-chip dual diode has been designed for high performance mixer applications. Main Features High cut-off frequencies: 3THz High breakdown voltage: < -5V @ 20A Good ideality factor: 1.2 Low parasitic inductances Low cost technology Dimensions : 0.53 x 0.23 x 0.1mm Main Characteristics Tamb. = 25 C Symbol Wu Fco n BVak Gate Width Cut-off frequency Ideality factor Anode-cathode break-down voltage Parameter Typ 5 3 1.2 < -5 Unit m THz V ESD Protection: Electrostatic discharge sensitive device. Observe handling precautions! Ref. : DSDBES105A6354 - 20 Dec 06 1/4 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Departementale 128 - B.P.46 - 91401 Orsay Cedex France Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 DBES105A Equivalent Circuit Rs Flip-Chip Dual Diode Rp Cj0 Cpar Rs() 4.4 Cjo(fF) (0V) 9.5 Cpar(fF) 5.8 Fco(THz) 2.4 Fco = 1/(2 Rs [Cpar + Cjo]) Rp can be neglected Absolute Maximum Ratings (1) Tamb. = 25 C Symbol Vak Iak Parameter Reverse anode-cathode voltage Forward anode-cathode current Typ. values -5 10 Unit V mA (1) Operation of this device above anyone of these parameters may cause permanent damage. Imax vs Tamb 12 10 8 I max( mA) 6 4 2 0 0 20 40 60 Tam b ( C) 80 100 120 Ref. : DSDBES105A6354 - 20 Dec 06 2/4 Specifications subject to change without notice Route Departementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Flip-Chip Dual Diode Typical DC Measurements DBES105A -4.0 1E-01 1E-02 -3.0 -2.0 -1.0 Voltage UD [V] UI-Characteristic Current |ID| [A] 1E-03 1E-04 1E-05 1E-06 1E-07 1E-08 1E-09 1E-10 1E-11 0.00 0.25 0.50 0.75 1.00 Is = 3.5e-14 A 1x5m Typical On-Wafer Measurements Bias Conditions Vak = 0V Ref. : DSDBES105A6354 - 20 Dec 06 3/4 Specifications subject to change without notice Route Departementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 DBES105A Mechanical data Flip-Chip Dual Diode 30 100 30 diameter 20 26 204 460 Dimensions: 230 35 x 530 35 m Thickness= 100m 10 m 530 204 26 160 230 Dimensions in m Ordering Information Chip form: DBES105A99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. : DSDBES105A6354 - 20 Dec 06 4/4 Specifications subject to change without notice Route Departementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 |
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